Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/62041
Title: Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films
Authors: Qiu, XY
Zhang, SY
Zhang, T
Wang, RX
Li, LT
Zhang, Y
Dai, JY 
Issue Date: 2016
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2016, v. 122, no. 9, 797 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.
URI: http://hdl.handle.net/10397/62041
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-016-0326-y
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

1
Last Week
0
Last month
Citations as of Aug 14, 2017

WEB OF SCIENCETM
Citations

1
Last Week
0
Last month
Citations as of Jul 28, 2017

Page view(s)

16
Last Week
1
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.