Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61787
Title: Dynamic modulation of the transport properties of the LaAl O3/SrTi O3 interface using uniaxial strain
Authors: Zhang, F
Fang, YW
Chan, NY
Lo, WC
Li, DF
Duan, CG
Ding, F 
Dai, JY 
Issue Date: 2016
Publisher: American Physical Society
Source: Physical review. B, Condensed matter and materials physics, 2016, v. 93, no. 21, 214427 How to cite?
Journal: Physical review. B, Condensed matter and materials physics 
Abstract: Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO) heterostructure, mechanical strain has been proven to be an effective approach by growing the LAO/STO films on different substrates with varying lattice mismatches to STO. However, this lattice-mismatch-induced strain effect is static and biaxial, hindering the study of the strain effect in a dynamic way. In this work we realize dynamic and uniaxial strain to the LAO/STO oxide heterostructure at low temperature, through mechanical coupling from a magnetostrictive template. This anisotropic strain results in symmetry breaking at the interface and induces further splitting of the electronic band structure and therefore produces different conductivities along the x and y in-plane directions. In particular, we observe that along the strained direction the interface conductivity decreases by up to 70% under a tensile strain, while it increases by 6.8% under a compressive strain at 2 K. Also, it is revealed that the modulation on the interfacial transport property can be anisotropic, i.e., the resistance changes differently when an excitation current is parallel or perpendicular to the strain direction. This approach of strain engineering provides another degree of freedom for control of transport properties of oxide heterostructures and opens an additional way to investigate strain effects in materials science.
URI: http://hdl.handle.net/10397/61787
ISSN: 1098-0121
EISSN: 1550-235X
DOI: 10.1103/PhysRevB.93.214427
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