Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61570
Title: N2-plasma-treated Ga2O3(Gd2O3) as interface passivation layer for Ge MOS capacitor with HfTiON gate dielectric
Authors: Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM 
Keywords: Ga2O3(Gd2O3) (GGO) interlayer
Ge MOS
Interface-state density
Stacked gate-dielectric
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2016, v. 63, no. 7, 7476871, p. 2838-2843 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: The interfacial and electrical properties of sputtered Ti-incorporated Hf oxynitride on Ga2O3(Gd2O3) (GGO) with or without N2-plasma treated as an interfacial passivation layer (IPL) for Ge MOS capacitor are compared. It is found that low interface-state density (3.4 × 1011 cm-2 eV-1), small gate leakage current (2.93 × 10-5 A/cm2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.09 nm), and large equivalent dielectric constant (26.5) can be achieved for the sample with N2-plasma-treated GGO IPL. The involved mechanisms lie in the fact that the N2-plasma-treated GGO IPL can effectively block the interdiffusion of elements and suppress the formation of GeOx interfacial layer.
URI: http://hdl.handle.net/10397/61570
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2016.2565691
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