Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61550
Title: Solution processable high-performance infrared organic photodetector by iodine doping
Authors: Tian, P
Tang, L
Xiang, J
Sun, Z
Ji, R
Lai, SK
Lau, SP 
Kong, J
Zhao, J
Yang, C
Li, Y
Issue Date: 2016
Publisher: Royal Society of Chemistry
Source: RSC advances, 2016, v. 6, no. 51, p. 45166-45171 How to cite?
Journal: RSC advances 
Abstract: Solution processable high-performance, large-area, low-cost infrared organic photodetectors (OPDs) have been receiving more and more attention for their important applications both in scientific and technological fields. The search for a simple method to upgrade device performance for OPDs becomes increasingly important. Here, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I2), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a ∼11000-fold increase in responsivity for the detector. A high detectivity (D∗) of ∼1.6 × 1012 cm Hz1/2 W-1, a good specific responsivity (R) of ∼80 A W-1 and a large EQE (external quantum efficiency) of 120% are achieved under illumination (λ = 850 nm) at room temperature. Systematic characterizations reveal that iodine-doping can introduce acceptor states in the energy band gap for the polymer layer, and thus increase the harvesting to long wavelength photons. A small dose of iodine doping can significantly induce improvement in device performance. This work demonstrates a simple but feasible method to enhance an NIR optoelectronics device.
URI: http://hdl.handle.net/10397/61550
EISSN: 2046-2069
DOI: 10.1039/c6ra02773c
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