Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/6155
Title: Functional thin-film transistors based on hybrid materials
Authors: Sun, Zhenhua
Keywords: Thin film transistors -- Materials.
Hong Kong Polytechnic University -- Dissertations
Issue Date: 2013
Publisher: The Hong Kong Polytechnic University
Abstract: P3HT/Titania (TiO₂) nanoparticles hybrid materials have been investigated. It was found that hole mobility in P3HT can be enhanced by pyridine-capped TiO₂ nanorods. Both the shape of nanoparticles and surface ligand were proved crucial to the enhancement. Characterizations of the hybrid films showed that this enhancement of hole mobility can be attribute to the improved crystallinity of P3HT which may be induced by the self-assembly effect cased by pyridine-capped TiO₂ nanorods. The ultraviolet (UV) phototransistor fabricated based on this kind of hybrid film show much better performance than the devices based on TiO₂ nanoparticles without the surface modification of pyridine. Light driving, multilevel, rewritable and nonvolatile memories were fabricated with CVD grown single-layer graphene decorated with TiO₂ nanodots which are capped with pyridine ligand on the surface. The memory is a TFT with a bottom-gate top-contact structure. The conductivity of the channel can be changed by UV illumination and shows excellent retention property. Since the conductivity can be modulated to various values by carefully controlling the illumination conditions, including the light intensity and illumination time, the device can be used as a multilevel memory. Thus different conductive state can be regarded as nonvolatile information programmed by UV illumination. The change of the conductivity of the channel can be attributed to net positive charges generated in TiO₂ nanodots under UV. The pyridine surface ligand which can trap the photon-induced holes in TiO₂ is critical to the nonvolatile memory effect. Positive gate voltage can be used to erase the excitation states thus make the memory rewritable. This study opens a novel path towards nonvolatile multilevel memories.
Description: xxv, 168 leaves : ill. (chiefly col.) ; 30 cm.
PolyU Library Call No.: [THS] LG51 .H577P AP 2013 Sun
URI: http://hdl.handle.net/10397/6155
Rights: All rights reserved.
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