Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/61544
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Fang, X | - |
dc.creator | Mak, CL | - |
dc.creator | Zhang, S | - |
dc.creator | Wang, Z | - |
dc.creator | Yuan, W | - |
dc.creator | Ye, H | - |
dc.date.accessioned | 2016-12-19T08:56:15Z | - |
dc.date.available | 2016-12-19T08:56:15Z | - |
dc.identifier.issn | 0953-8984 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/61544 | - |
dc.language.iso | en | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.rights | © 2016 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. | en_US |
dc.rights | The following publication Fang, X., Mak, C. L., Zhang, S., Wang, Z., Yuan, W., & Ye, H. (2016). Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region. Journal of Physics: Condensed Matter, 28(22), 224009 is available at https://doi.org/10.1088/0953-8984/28/22/224009 | en_US |
dc.subject | Deposition conditions | en_US |
dc.subject | Indium tin oxide | en_US |
dc.subject | Optical and electrical properties | en_US |
dc.subject | Plasmonic property | en_US |
dc.title | Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 28 | en_US |
dc.identifier.issue | 22 | en_US |
dc.identifier.doi | 10.1088/0953-8984/28/22/224009 | en_US |
dcterms.abstract | Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34 × 1021 cm-3 with the lowest corresponding resistivity of 2.41 × 10-4 Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of physics condensed matter, 2016, v. 28, no. 22, 224009 | - |
dcterms.isPartOf | Journal of physics condensed matter | - |
dcterms.issued | 2016 | - |
dc.identifier.isi | WOS:000376409900011 | - |
dc.identifier.scopus | 2-s2.0-84969852592 | - |
dc.identifier.pmid | 27054885 | - |
dc.identifier.eissn | 1361-648X | en_US |
dc.identifier.rosgroupid | 2015003781 | - |
dc.description.ros | 2015-2016 > Academic research: refereed > Publication in refereed journal | en_US |
dc.description.validate | 201901_a bcma | en_US |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Fang_Pulsed_laser_deposited.pdf | 2.04 MB | Adobe PDF | View/Open |
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