Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61491
Title: Crystallography of phase transformation in the self-inclined InAs nanowires grown on GaAs(111)
Authors: Liu, Z
Zhang, Z
Jiang, R
Li, X
Zhang, M
Qiu, D
Keywords: Crystallography
Edge-to-edge matching
Nanowires
Self-inclined interface
TEM
Issue Date: 2016
Publisher: Pergamon Press
Source: Scripta materialia, 2016, v. 121, p. 79-83 How to cite?
Journal: Scripta materialia 
Abstract: During growth of InAs nanowires (NWs) on GaAs(111), the self-inclined InAs NWs were reproducibly observed. At the self-inclined interface, the h.c.p. InAs phase was transformed into another f.c.c. InAs phase. In order to investigate the crystallography of phase transformation, a recently-developed model, edge-to-edge matching (E2EM), was applied in such self-inclined NWs for crystallographic investigation. The orientation relationships (ORs), between f.c.c. InAs and h.c.p. InAs, were predicted using the E2EM model, which agrees well with experimental results. The results indicate the importance of crystallographic study in design and construction of nanostructured semiconductors with improved physical properties.
URI: http://hdl.handle.net/10397/61491
ISSN: 1359-6462
EISSN: 1872-8456
DOI: 10.1016/j.scriptamat.2016.04.039
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