Please use this identifier to cite or link to this item:
Title: Selectable synthesis of 2-D MoS2 and its electronic devices : from isolated Triangular Islands to large-area continuous thin film
Authors: Cho, WC
Wu, KL
Yip, PS
Wang, X
Chai, Y 
Lau, KM
Keywords: 2D materials
Chemical vapor deposition
Field effect transistor
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on nanotechnology, 2016, v. 15, no. 2, 7398078, p. 310-317 How to cite?
Journal: IEEE transactions on nanotechnology 
Abstract: We report on the controllable and selectable synthesis of two-dimensional (2-D) molybdenum disulfide (MoS2 ) by molybdenum trioxide sulfurization with chemical vapor deposition. By controlling the sulfurization timing and substrates positions, the selectable growth of MoS2 isolated triangular islands and continuous thin film was successfully performed independently with the same home-built furnace setup. Also, we found that the hydrofluoric acid substrate treatment took effects on MoS2 nucleation seed densities and modulated the sizes of the triangular islands. Atomic force microscopy and Raman and photoluminescence spectroscopy were used to characterize and compare the properties of MoS2 triangular islands and continuous thin film. The MoS2 triangular islands were monolayers and highly crystalline in nature; where the continuous thin film was formed by small grain size MoS2 nanosheets with smooth surface morphology and a large covered area of up to centimeters. Back-gated field effect transistors (FETs) of as-grown MoS2 triangular islands and continuous thin film were fabricated to analyze their electrical properties. The electron mobilities were measured to be 11.42 and 4.04 cm2/V·s respectively, and with an excellent on/off current ratio up to over 108, which demonstrated the good quality of the as-grown MoS2 samples. Furthermore, both the MoS2 triangular islands and continuous thin film FETs exhibited a near ideal current saturation characteristic, which shows the real potential of future applications for 2-D electronic devices.
ISSN: 1536-125X
EISSN: 1941-0085
DOI: 10.1109/TNANO.2016.2524044
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record


Last Week
Last month
Citations as of Nov 6, 2018


Last Week
Last month
Citations as of Nov 14, 2018

Page view(s)

Last Week
Last month
Citations as of Nov 12, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.