Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61312
Title: Microstructure defects mediated charge transport in Nb-doped epitaxial BaTiO3 thin films
Authors: Zhou, J
Jing, X
Alexe, M
Dai, J 
Qin, M
Wu, S
Zeng, M
Gao, J
Lu, X
Liu, JM
Keywords: BaTiO3
Carrier mobility
Charge transport
Conductivity
Microstructure defects
Issue Date: 2016
Publisher: Institute of Physics Publishing
Source: Journal of physics. D, Applied physics, 2016, v. 49, no. 17, 175302 How to cite?
Journal: Journal of physics. D, Applied physics 
Abstract: Nb-doped BaTiO3 (BNTO) films were deposited on MgO substrates at different substrate temperatures by pulsed laser deposition. The temperature dependence of their resistivity, carrier mobility and carrier concentration were systematically investigated. It reveals that the BNTO films deposited at lower temperature show higher resistivity and lower carrier mobility, and only show semiconductor characteristics at measurement temperatures ranging from 10 to 400 K. There is a metal-semiconductor transition at about 20 K for the films grown at relatively higher temperature. The intrinsic mechanism responsible for the different charge transport behavior was revealed by microstructure studies. Low crystal quality and high density of microstructure defects, observed for BNTO films grown at low temperatures, are, in particular, massively affecting the charge transport behavior of the BNTO films. The mediated charge transport of the microstructure defects is dominated by the thermal excitation process.
URI: http://hdl.handle.net/10397/61312
ISSN: 0022-3727
EISSN: 1361-6463
DOI: 10.1088/0022-3727/49/17/175302
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