Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61271
Title: Carrier type control of WSe2 field-effect transistors by thickness modulation and MoO3 layer doping
Authors: Zhou, C
Zhao, Y
Raju, S
Wang, Y 
Lin, Z
Chan, M
Chai, Y 
Keywords: 2D materials
Carrier type
Doping
Field-effect transistor
Issue Date: 2016
Publisher: Wiley-VCH
Source: Advanced functional materials, 2016, v. 26, no. 23, p. 4223-4230 How to cite?
Journal: Advanced functional materials 
Abstract: Control of the carrier type in 2D materials is critical for realizing complementary logic computation. Carrier type control in WSe2 field-effect transistors (FETs) is presented via thickness engineering and solid-state oxide doping, which are compatible with state-of-the-art integrated circuit (IC) processing. It is found that the carrier type of WSe2 FETs evolves with its thickness, namely, p-type (<4 nm), ambipolar (≈6 nm), and n-type (>15 nm). This layer-dependent carrier type can be understood as a result of drastic change of the band edge of WSe2 as a function of the thickness and their band offsets to the metal contacts. The strong carrier type tuning by solid-state oxide doping is also demonstrated, in which ambipolar characteristics of WSe2 FETs are converted into pure p-type, and the field-effect hole mobility is enhanced by two orders of magnitude. The studies not only provide IC-compatible processing method to control the carrier type in 2D semiconductor, but also enable to build functional devices, such as, a tunable diode formed with an asymmetrical-thick WSe2 flake for fast photodetectors.
URI: http://hdl.handle.net/10397/61271
ISSN: 1616-301X
DOI: 10.1002/adfm.201600292
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