Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61259
Title: Strong compensation hinders the p-type doping of ZnO : a glance over surface defect levels
Authors: Huang, B 
Keywords: Nitrogen doping
Surface p-type conduction
Transition levels
Issue Date: 2016
Publisher: Pergamon Press
Source: Solid state communications, 2016, v. 237-238, p. 34-37 How to cite?
Journal: Solid state communications 
Abstract: We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.
URI: http://hdl.handle.net/10397/61259
ISSN: 0038-1098
EISSN: 1879-2766
DOI: 10.1016/j.ssc.2016.03.010
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