Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61195
Title: Upconversion photoluminescence of epitaxial Yb3+/Er3+ codoped ferroelectric Pb(Zr,Ti)O3 films on silicon substrates
Authors: Zhang, Y
Kämpfe, T
Bai, G
Mietschke, M
Yuan, F
Zopf, M
Abel, S
Eng, LM
Hühne, R
Fompeyrine, J
Ding, F
Schmidt, OG
Keywords: Epitaxial thin films
Ferroelectrics
Lanthanides
Pulsed laser deposition
Upconversion luminescence
Issue Date: 2016
Publisher: Elsevier
Source: Thin solid films, 2016, v. 607, p. 32-35 How to cite?
Journal: Thin solid films 
Abstract: Thin films of Yb3+/Er3+ codoped Pb(Zr,Ti)O3 (PZT:Yb/Er) have been epitaxially grown on the SrTiO3 buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform.
URI: http://hdl.handle.net/10397/61195
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2016.03.046
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