Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61117
Title: Influences of remote Coulomb and interface-roughness scatterings on electron mobility of InGaAs nMOSFET with high-k stacked gate dielectric
Authors: Wang, LS
Xu, JP
Liu, L
Huang, Y
Lu, HH
Lai, PT
Tang, WM 
Keywords: Effective electron mobility
High-k dielectric
InGaAs MOSFETs
Remote Coulomb scattering
Remote interfaceroughness scattering
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on nanotechnology, 2015, v. 14, no. 5, 7140817, p. 854-861 How to cite?
Journal: IEEE transactions on nanotechnology 
Abstract: A physics-based electron-mobility model including remote Coulomb scattering by fixed charge in high-k dielectric and remote interface-roughness scattering originated from the fluctuation of high-k/interlayer interface is established for InGaAs MOSFET, and the validity of the model is confirmed by good agreement between simulated results and experimental data. Effects of structural and physical parameters of the devices on the electron mobility are analyzed using the model, and the results show that smoother high-k/interlayer interface, reasonably high permittivities for the interlayer and high-k dielectric, and less fixed charge in the high-k dielectric are desired to enhance the electron mobility and simultaneously keep further scaling of equivalent oxide thickness.
URI: http://hdl.handle.net/10397/61117
ISSN: 1536-125X
EISSN: 1941-0085
DOI: 10.1109/TNANO.2015.2451134
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