Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61071
Title: Recrystallization of amorphized Si during micro-grinding of RB-SiC/Si composites
Authors: Zhang, Q
To, S 
Zhao, Q
Guo, B
Keywords: Micro-grinding
Phase transformation
Recrystallization
Silicon
X-ray diffraction
Issue Date: 2016
Publisher: North-Holland
Source: Materials letters, 2016, v. 172, p. 48-51 How to cite?
Journal: Materials letters 
Abstract: X-ray diffraction (XRD) was performed to investigate the phase transformation of Reaction-Bonded SiC/Si composites (RB-SiC/Si) induced by micro-grinding. The results showed that amorphization (High Pressure Phase Transformation, HPPT) occurred for both SiC and Si phases in the outmost layer, and the amorphization degree dropped as the feed rate changed from 3 mm/min to 0.1 mm/min. Moreover, we firstly found that recrystallization of amorphized Si appeared in preferred orientation under grinding. Specifically, preferred Si(111) growth occurred at a lower feed rate attributed to the more obvious annealing effect, while preferred Si(220) recrystallization developed at higher feed rate due to the greater strain. Theoretical analysis based on the crystal structure of Si yield good consistence.
URI: http://hdl.handle.net/10397/61071
ISSN: 0167-577X
EISSN: 1873-4979
DOI: 10.1016/j.matlet.2016.02.027
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