Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/61001
Title: Infrared light gated MoS2 field effect transistor
Authors: Fang, H
Lin, Z
Wang, X
Tang, CY
Chen, Y
Zhang, F
Chai, Y 
Li, Q
Yan, Q
Chan, HLW 
Dai, JY 
Issue Date: 2015
Publisher: Optical Society of America
Source: Optics express, 2015, v. 23, no. 25, p. 31908-31914 How to cite?
Journal: Optics express 
Abstract: Molybdenum disulfide (MoS2) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS2 transistor through a device composed of MoS2 monolayer and a ferroelectric single crystal Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT). With a monolayer MoS2 onto the top surface of (111) PMN-PT crystal, the drain current of MoS2 channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm-2. The IR response of MoS2 transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS2 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS2 in the visible range, the MoS2 on ferroelectric single crystal may be sensitive to a broadband wavelength of light.
URI: http://hdl.handle.net/10397/61001
EISSN: 1094-4087
DOI: 10.1364/OE.23.031908
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