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|Title:||A novel process for preparing PZT thick films|
|Source:||ISAF 2000 : proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, Hawaii, U.S.A., July 21-August 2, 2000, p. 515-518 How to cite?|
|Abstract:||A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5µm thickness has a large remanent polarization of 44µC/cm², small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.|
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|Appears in Collections:||Conference Paper|
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