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Title: Structural and property changes of high energy proton-irradiated poly(vinylidene fluoride-trifluoroethylene) 56/44 mol.% copolymer
Authors: Lau, ST
Chan, HLW 
Sundaravel, B
Wilson, IH
Choy, CL 
Keywords: Copolymers
Crystal lattices
Crystal microstructure
Dielectric relaxation
Electric fields
Fluorine containing polymers
Phase transitions
Proton irradiation
Vinyl resins
X ray diffraction analysis
Issue Date: 2002
Publisher: IEEE
Source: 11th International Symposium on Electrets (ISE 11) : 1-3 October, 2002, Glen Waverley, Melbourne, Australia : proceedings, p. 102-105 How to cite?
Abstract: High-energy proton irradiation with a broad range of dosages has been carried out to investigate the potential for modifying the properties of poly(vinylidene fluoride-trifluoroethylene) 56/44 mol.% copolymer films. The relative permittivity, polarization hysteresis, electric field induced strain, lattice spacing and phase transition behavior of the irradiated copolymer films were studied. With regards to the dielectric and polarization behaviors, the copolymer film can be converted from a typical ferroelectric to a relaxor ferroelectric upon irradiation. This implies that the high-energy protons can break up the coherent polarization domains in the normal ferroelectric copolymer into nano-sized regions. Besides, the XRD data showed that the solid-state phase transition from the polar phase to nonpolar phase is induced in the copolymer during irradiation in which the lattice spacing increases significantly. The electric field induced phase transformation of the nano-sized regions between the polar and nonpolar phase leads to a high electrostrictive strain observed in the irradiated copolymers.
ISBN: 0-7803-7560-2
Rights: © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
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