Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/547
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorKwok, KW-
dc.creatorTsang, CWR-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:28:14Z-
dc.date.available2014-12-11T08:28:14Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/547-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.W. Kwok et al., J. Appl. Phys. 95, 1372 (2004) and may be found at http://link.aip.org/link/?jap/95/1372.en_US
dc.subjectLead compoundsen_US
dc.subjectNiobiumen_US
dc.subjectPiezoceramicsen_US
dc.subjectPiezoelectric thin filmsen_US
dc.subjectSol-gel processingen_US
dc.subjectLiquid phase deposited coatingsen_US
dc.subjectDielectric polarisationen_US
dc.titleEffects of niobium doping on the piezoelectric properties of sol-gel-derived lead-zirconate-titanate filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. W. Kwoken_US
dc.description.otherinformationAuthor name used in this publication: R. C. W. Tsangen_US
dc.description.otherinformationAuthor name used in this publication: H. L. W. Chanen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.identifier.spage1372-
dc.identifier.epage1376-
dc.identifier.volume95-
dc.identifier.issue3-
dcterms.abstractSol-gel-derived lead-zirconate-titanate (PZT) films doped with various amounts of niobium (Nb) have been spin coated on silicone substrates, and their remanent polarization P[sub r], and effective longitudinal and transverse piezoelectric coefficients (d[sub 33,c] and e[sub 31,c]) as well as the pyroelectric coefficient p, have been measured. The Zr/Ti ratio of the films is 53/47. Our results reveal that the Nb-dopant effects on the PZT films are very similar to the experimentally known effects on the corresponding bulk ceramics, i.e., enhancing both the longitudinal and transverse piezoelectric properties. However, because of the substrate clamping effect, the exact enhancement in the longitudinal piezoelectric properties cannot be evaluated by the d[sub 33,c] measurement on the film samples. Accordingly, the observed d[sub 33,c] value of the Nb-doped PZT films remains almost unchanged while the observed -e[sub 31,c] (as well as P[sub r] and p) increases with increasing Nb concentration, showing an optimum Nb concentration of 2 mol %. For the PZT film doped with 2% Nb, the observed values of P[sub r], d[sub 33,c], -e[sub 31,c], and p are about 30 µC/cm², 95 pm/V, 18 C/m², and 350 µC/m²K, respectively.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Feb. 2004, v. 95, no. 3, p. 1372-1376-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2004-02-01-
dc.identifier.isiWOS:000188281800083-
dc.identifier.scopus2-s2.0-1142304492-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr19570-
dc.description.ros2003-2004 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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