Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/534
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dc.contributorInstitute of Textiles and Clothing-
dc.creatorWang, RX-
dc.creatorXu, SJ-
dc.creatorDjurišić, AB-
dc.creatorBeling, CD-
dc.creatorCheung, CK-
dc.creatorCheung, CH-
dc.creatorFung, S-
dc.creatorZhao, DG-
dc.creatorYang, H-
dc.creatorTao, X-
dc.date.accessioned2014-12-11T08:28:06Z-
dc.date.available2014-12-11T08:28:06Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/534-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.X. Wang et al., Appl. Phys. Lett. 89, 33503 (2006) and may be found at http://link.aip.org/link/?apl/89/033503en_US
dc.subjectIndium compoundsen_US
dc.subjectTin compoundsen_US
dc.subjectGallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectSchottky barriersen_US
dc.subjectLeakage currentsen_US
dc.subjectVacuum depositionen_US
dc.subjectX-ray photoelectron spectraen_US
dc.subjectPoint defectsen_US
dc.titleInfluence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contactsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: X. M. Taoen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume89-
dc.identifier.issue3-
dcterms.abstractIndium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200°C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 19 July 2006, v. 89, no. 3, 033503, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2006-07-19-
dc.identifier.isiWOS:000239174100109-
dc.identifier.scopus2-s2.0-33746309216-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr32975-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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