Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/534
DC Field | Value | Language |
---|---|---|
dc.contributor | Institute of Textiles and Clothing | - |
dc.creator | Wang, RX | - |
dc.creator | Xu, SJ | - |
dc.creator | Djurišić, AB | - |
dc.creator | Beling, CD | - |
dc.creator | Cheung, CK | - |
dc.creator | Cheung, CH | - |
dc.creator | Fung, S | - |
dc.creator | Zhao, DG | - |
dc.creator | Yang, H | - |
dc.creator | Tao, X | - |
dc.date.accessioned | 2014-12-11T08:28:06Z | - |
dc.date.available | 2014-12-11T08:28:06Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/534 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.X. Wang et al., Appl. Phys. Lett. 89, 33503 (2006) and may be found at http://link.aip.org/link/?apl/89/033503 | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | Tin compounds | en_US |
dc.subject | Gallium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | Wide band gap semiconductors | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | Leakage currents | en_US |
dc.subject | Vacuum deposition | en_US |
dc.subject | X-ray photoelectron spectra | en_US |
dc.subject | Point defects | en_US |
dc.title | Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: X. M. Tao | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 89 | - |
dc.identifier.issue | 3 | - |
dcterms.abstract | Indium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200°C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 19 July 2006, v. 89, no. 3, 033503, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2006-07-19 | - |
dc.identifier.isi | WOS:000239174100109 | - |
dc.identifier.scopus | 2-s2.0-33746309216 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r32975 | - |
dc.description.ros | 2006-2007 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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indium-tin-oxide_06.pdf | 85.68 kB | Adobe PDF | View/Open |
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