Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/51037
Title: Process induced magnetic sensitivity variation in sectorial split-drain magnetic field-effect transistor
Authors: Tam, WS
Siu, SL
Kok, CW
Leung, CW 
Pont, PWT
Wong, H
Issue Date: 2014
Source: The 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, 7-10 May 2014, p. 41 How to cite?
URI: http://hdl.handle.net/10397/51037
Appears in Collections:Conference Paper

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