Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/51012
Title: Split-drain magnetic field-effect transistor channel charge trapping and stress induced sensitivity deterioration
Authors: Yang, ZY
Siu, SL
Tam, WS
Kok, CW
Leung, CW 
Lai, PT
Wong, H
Tang, WM
Pong, PWT
Issue Date: 2013
Source: The 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA 2013), Taichung, Taiwan, 21-25 July 2013, p. 168 How to cite?
URI: http://hdl.handle.net/10397/51012
Appears in Collections:Conference Paper

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