Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/50257
Title: Magnetism as a probe of the origin of memristive switching in oxide semiconductors
Authors: Ruotolo, A
Wang, XL
Qi, S
Leung, CW 
Issue Date: 2014
Source: The 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, 7-10 May 2014, p. 25 How to cite?
URI: http://hdl.handle.net/10397/50257
Appears in Collections:Conference Paper

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