Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4999
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorChen, XY-
dc.creatorFang, F-
dc.creatorNg, AMC-
dc.creatorDjurišić, AB-
dc.creatorCheah, KW-
dc.creatorLing, C-
dc.creatorChan, WK-
dc.creatorFong, WKP-
dc.creatorLui, HF-
dc.creatorSurya, C-
dc.date.accessioned2014-12-11T08:25:14Z-
dc.date.available2014-12-11T08:25:14Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4999-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Y. Chen et al., J. Appl. Phys. 109, 084330 (2011) and may be found at http://link.aip.org/link/?jap/109/084330.en_US
dc.subjectDoping profilesen_US
dc.subjectElectrodepositionen_US
dc.subjectGallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectnanofabricationen_US
dc.subjectNanorodsen_US
dc.subjectRectificationen_US
dc.subjectSemiconductor dopingen_US
dc.subjectSemiconductor growthen_US
dc.subjectSemiconductor heterojunctionsen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectZinc compoundsen_US
dc.titleNitrogen doped-ZnO/n-GaN heterojunctionsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Aleksandra B. Djurišičen_US
dc.description.otherinformationAuthor name used in this publication: Kok Wai Cheahen_US
dc.description.otherinformationAuthor name used in this publication: Chi Chung Lingen_US
dc.description.otherinformationAuthor name used in this publication: Wai Kin Chanen_US
dc.description.otherinformationAuthor name used in this publication: Patrick W. K. Fongen_US
dc.description.otherinformationAuthor name used in this publication: Hsian Fei Luien_US
dc.identifier.spage1-
dc.identifier.epage7-
dc.identifier.volume109-
dc.identifier.issue8-
dc.identifier.doi10.1063/1.3575178-
dcterms.abstractNitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 Apr. 2011, v. 109, no. 8, 084330, p. 1-7-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2011-04-15-
dc.identifier.isiWOS:000290047000181-
dc.identifier.scopus2-s2.0-79955721210-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr57308-
dc.description.ros2011-2012 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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