Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4982
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorSundaravel, B-
dc.creatorLuo, EZ-
dc.creatorXu, JB-
dc.creatorWilson, IH-
dc.creatorFong, WKP-
dc.creatorWang, LS-
dc.creatorSurya, C-
dc.date.accessioned2014-12-11T08:24:52Z-
dc.date.available2014-12-11T08:24:52Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4982-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Sundaravel et al., J. Appl. Phys. 87, 955 (2000) and may be found at http://link.aip.org/link/?jap/87/955.en_US
dc.subjectGallium compoundsen_US
dc.subjectMagnesiumen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectMOCVD coatingsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectChannellingen_US
dc.subjectRutherford backscatteringen_US
dc.subjectX-ray diffractionen_US
dc.subjectStacking faultsen_US
dc.subjectDislocation densityen_US
dc.subjectDislocation structureen_US
dc.titleIon channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al₂O₃(0001)en_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: W. K. Fongen_US
dc.description.otherinformationAuthor name used in this publication: C. Suryaen_US
dc.identifier.spage955-
dc.identifier.epage957-
dc.identifier.volume87-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.371966-
dcterms.abstractRutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(001) on an Al₂O₃(0001) substrate with a GaN buffer layer. Off-normal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[¯110]││GaN[¯1120]││Al₂O₃[¯1120]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 Jan. 2000, v. 87, no. 2, p. 955-957-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2000-01-15-
dc.identifier.isiWOS:000084506500053-
dc.identifier.scopus2-s2.0-0000616953-
dc.identifier.eissn1089-7550-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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