Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/49587
Title: Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs
Authors: Jha, S
Gao, J
Zhu, CF
Jelenkovic, E
Tong, KY
Pilkuhn, M
Surya, C 
Schweizer, H
Issue Date: 2005
Source: Proceedings of the 18th International Conference on Noise and Fluctuations (ICNF’ 2005), Salamanca, Spain, September 2005, p. 295-298 How to cite?
URI: http://hdl.handle.net/10397/49587
Appears in Collections:Conference Paper

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