Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/49417
Title: Si-doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source
Authors: Fong, WK
Leung, KK
Surya, C 
Issue Date: 2006
Source: Proceedings of the 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII’ 2006), Miyazaki, Japan, May 2006, p. 355-356 How to cite?
URI: http://hdl.handle.net/10397/49417
Appears in Collections:Conference Paper

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