Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/49273
Title: Low frequency noise characterization in alGaN/GaN hEMTs with varying gate recess depth
Authors: Jha, SK
Leung, BH
Surya, C 
Schweizer, H
Pilkhuhn, M
Issue Date: 2004
Source: Proceedings of the 2004 MRS Fall Meeting, Bostan, US.A., November-December 2004, p. E8.31.1-E8.31.6 How to cite?
URI: http://hdl.handle.net/10397/49273
Appears in Collections:Conference Paper

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