Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/46858
Title: Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor
Authors: Jha, SK
Surya, C 
Chen, KJ
Lau, KM
Issue Date: 2006
Source: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC' 2006), Montreux, Switzerland, September 2006, p. 105-108 How to cite?
URI: http://hdl.handle.net/10397/46858
Appears in Collections:Conference Paper

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