Rectifying characteristics and transport behavior of SrTiO[sub3−δ]110/p-Si (100) heterojunctions

Abstract

Introducing oxygen vacancy causes the dielectric insulator SrTiO₃ to evolve to a n-type semiconductor. The authors have fabricated n-SrTiO[sub 3−δ](110)/p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V = ±2 V for the p-n junction operated at T = 292 K. The current-voltage characteristic follows I∝exp(eV/ηkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I ∼ V¹∙⁹ describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model.