Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/457
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Zhu, JS | - |
dc.creator | Qin, HX | - |
dc.creator | Bao, ZH | - |
dc.creator | Wang, Y | - |
dc.creator | Cai, WY | - |
dc.creator | Chen, PP | - |
dc.creator | Lu, W | - |
dc.creator | Chan, HLW | - |
dc.creator | Choy, CL | - |
dc.date.accessioned | 2014-12-11T08:27:48Z | - |
dc.date.available | 2014-12-11T08:27:48Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/457 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J.S. Zhu et al. Appl. Phys. Lett. 79, 3827 (2001) and may be found at http://link.aip.org/link/?apl/79/3827 | en_US |
dc.subject | Strontium compounds | en_US |
dc.subject | Bismuth compounds | en_US |
dc.subject | Titanium compounds | en_US |
dc.subject | Ferroelectric ceramics | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | Raman spectra | en_US |
dc.subject | Ferroelectric storage | en_US |
dc.subject | Vibrational states | en_US |
dc.subject | Grain size | en_US |
dc.subject | Crystallisation | en_US |
dc.title | X-ray diffraction and Raman scattering study of SrBi₂Ta₂O[sub 9] ceramics and thin films with Bi₃TiNbO[sub 9] addition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 3827 | - |
dc.identifier.epage | 3829 | - |
dc.identifier.volume | 79 | - |
dc.identifier.issue | 23 | - |
dcterms.abstract | Good ferroelectric properties have previously been reported for both the (1-x)SrBi₂Ti₂O[sub 9]-xBi₃TiNbO[sub 9] bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi₃TiNbO[sub 9] into SrBi₂Ta₂O[sub 9] bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta-O(4) or Ta-O(5) ions are the origin for the good ferroelectric properties of (1-x)SrBi₂Ta₂O[sub 9]-xBi₃TiNbO[sub 9] with x=0.3-0.4. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 3 Dec. 2001, v. 79, no. 23, p.3827-3829 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2001-12-03 | - |
dc.identifier.isi | WOS:000172362500027 | - |
dc.identifier.scopus | 2-s2.0-0039147850 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r06910 | - |
dc.description.ros | 2001-2002 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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ramar-scattering_01.pdf | 78.04 kB | Adobe PDF | View/Open |
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