Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4573
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dc.contributorDepartment of Applied Physics-
dc.contributorDepartment of Mechanical Engineering-
dc.creatorRen, XC-
dc.creatorWang, SM-
dc.creatorLeung, CW-
dc.creatorYan, F-
dc.creatorChan, PKL-
dc.date.accessioned2014-12-11T08:24:08Z-
dc.date.available2014-12-11T08:24:08Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4573-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. C. Ren et al, Appl. Phys. Lett. 99, 043303 (2011) and may be found at http://link.aip.org/link/?apl/99/043303en_US
dc.subjectAnnealingen_US
dc.subjectElectron trapsen_US
dc.subjectHole trapsen_US
dc.subjectNanoparticlesen_US
dc.subjectRandom-access storageen_US
dc.subjectSilveren_US
dc.titleThermal annealing and temperature dependences of memory effect in organic memory transistoren_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: F. Yanen_US
dc.description.otherinformationAuthor name used in this publication: P. K. L. Chanen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume99-
dc.identifier.doi10.1063/1.3617477-
dcterms.abstractWe investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23% due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100%. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 25 July 2011, v. 99, 043303, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2011-07-25-
dc.identifier.isiWOS:000293475500071-
dc.identifier.scopus2-s2.0-79961034744-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr59401-
dc.description.ros2011-2012 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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