Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/444
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorZhu, X-
dc.creatorChong, N-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.creatorWong, KH-
dc.creatorLiu, Z-
dc.creatorMing, N-
dc.date.accessioned2014-12-11T08:27:42Z-
dc.date.available2014-12-11T08:27:42Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/444-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Zhu et al. Appl. Phys. Lett. 80, 3376 (2002) and may be found at http://link.aip.org/link/?apl/80/3376en_US
dc.subjectBarium compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectFerroelectric materialsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectStoichiometryen_US
dc.subjectPulsed laser depositionen_US
dc.subjectVapour phase epitaxial growthen_US
dc.subjectPermittivityen_US
dc.subjectDielectric lossesen_US
dc.subjectRutherford backscatteringen_US
dc.subjectCapacitanceen_US
dc.subjectInternal stressesen_US
dc.subjectThin film capacitorsen_US
dc.subjectFerroelectric capacitorsen_US
dc.titleEpitaxial growth and planar dielectric properties of compositionally graded (Ba[sub 1-x]Sr[sub x])TiO₃ thin films prepared by pulsed-laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage3376-
dc.identifier.epage3378-
dc.identifier.volume80-
dc.identifier.issue18-
dc.identifier.doi10.1063/1.1475367-
dcterms.abstractWe have heteroepitaxially deposited compositionally graded (Ba[1-x]Sr[sub x])TiO₃ (BST) thin films with increasing x from 0.0 to 0.25 on (100)-oriented MgO substrates using pulsed-laser deposition. The compositional gradients along the depth in the graded films were characterized by Rutherford backscattering spectroscopy. By using surface interdigital electrodes, the planar dielectric response of epitaxial graded BST films was measured as a function of frequency, temperature, and dc applied voltage. At room temperature, the dielectric constant of the graded BST film was about 450 with a dielectric loss, tan δ of 0.007 at 100 kHz. Measurements varying the dc bias voltage showed hysteresis of the dielectric response and a tunability of 25% at an applied electric field of 80 kV/cm. The graded BST films undergo a diffuse phase transition with a broad and flat profile of the capacitance versus temperature. Such behavior of the dielectric response in graded BST films is attributed to the presence of the compositional and/or residual strain gradients in the epitaxial graded films. With such a graded structure, it is possible to a build a dielectric thin-film capacitor with a low-temperature dependence of the capacitor over a broad temperature regime.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 6 May 2002, v. 80, no. 18, p.3376-3378-
dcterms.isPartOfApplied physics letters-
dcterms.issued2002-05-06-
dc.identifier.isiWOS:000175298400044-
dc.identifier.scopus2-s2.0-79956045865-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr05971-
dc.description.ros2001-2002 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
planar-dielectric_02.pdf126.04 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

97
Last Week
2
Last month
Citations as of Mar 17, 2024

Downloads

177
Citations as of Mar 17, 2024

SCOPUSTM   
Citations

67
Last Week
0
Last month
0
Citations as of Mar 14, 2024

WEB OF SCIENCETM
Citations

63
Last Week
0
Last month
0
Citations as of Mar 14, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.