Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/44016
Title: Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells
Authors: Duan, Y
Zheng, J
Fu, N
Hu, J
Liu, T
Fang, Y
Zhang, Q
Zhou, X
Lin, Y
Pan, F
Issue Date: 2015
Publisher: Royal Society of Chemistry
Source: RSC advances, 2015, v. 5, no. 114, p. 93765-93772 How to cite?
Journal: RSC advances 
Abstract: The photon-to-electricity conversion properties of the prepared photoanode based on SnO2 nanocrystals, which are assembled as the rough hollow microspheres (RHMs), are improved by aliovalent Ga3+ doping. The conduction band (CB) of the doped SnO2 shifts negatively with increasing the Ga content from 1 to 5 mol% gradually. Moreover, the prepared Ga-doped SnO2 photoanode shows an advantage in repressing the charge recombination. As a result, both the negative shift of the CB and repressed charge recombination enhance the open-circuit photovoltage (Voc) and the short-circuit photocurrent (Jsc) of the DSSCs, and the power conversion efficiency (η) is increased by 80% at 3 mol% Ga-doping SnO2 to compare with the undoped SnO2 for DSSCs (AM 1.5, 100 mW cm-2). After treating the samples with TiCl4, an overall photoconversion efficiency (approximately 7.11%) for SnO2 based DSSCs is achieved.
URI: http://hdl.handle.net/10397/44016
EISSN: 2046-2069
DOI: 10.1039/c5ra19491a
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