Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43971
Title: The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth
Authors: Zhao, R
Li, F
Liu, Z
Liu, Z
Ding, F 
Issue Date: 2015
Publisher: Royal Society of Chemistry
Source: Physical chemistry chemical physics, 2015, v. 17, no. 43, p. 29327-29334 How to cite?
Journal: Physical chemistry chemical physics 
Abstract: Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.
URI: http://hdl.handle.net/10397/43971
ISSN: 1463-9076
EISSN: 1463-9084
DOI: 10.1039/c5cp04833h
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