Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43912
Title: Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface : molecular dynamics simulation based on a new generation of carbon-metal potential
Authors: Xu, Z
Yan, T
Liu, G
Qiao, G
Ding, F 
Issue Date: 2016
Publisher: Royal Society of Chemistry
Source: Nanoscale, 2016, v. 8, no. 2, p. 921-929 How to cite?
Journal: Nanoscale 
Abstract: To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (57) to two adjacent hexagons (66), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results.
URI: http://hdl.handle.net/10397/43912
ISSN: 2040-3364 (print)
2040-3372 (online)
DOI: 10.1039/c5nr06016h
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