Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43911
Title: A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory
Authors: Fang, H
Li, Q
He, W
Li, J
Xue, Q
Xu, C
Zhang, L
Ren, T
Dong, G
Chan, HLW 
Dai, J 
Yan, Q
Issue Date: 2015
Publisher: Royal Society of Chemistry
Source: Nanoscale, 2015, v. 7, no. 41, p. 17306-17311 How to cite?
Journal: Nanoscale 
Abstract: We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 103. More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.
URI: http://hdl.handle.net/10397/43911
ISSN: 2040-3364
EISSN: 2040-3372
DOI: 10.1039/c5nr05098g
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