Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43886
Title: XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon
Authors: Jelenković, EV
To, S 
Blackford, MG
Kutsay, O
Jha, SK
Keywords: Raman spectroscopy
Ruthenium silicide (Ru2Si3)
Sputtering
TEM
XPS
Issue Date: 2015
Publisher: Pergamon Press
Source: Materials science in semiconductor processing, 2015, v. 40, p. 817-821 How to cite?
Journal: Materials science in semiconductor processing 
Abstract: Ru2Si3 silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.
URI: http://hdl.handle.net/10397/43886
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2015.07.085
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