Please use this identifier to cite or link to this item:
Title: XPS and TEM study of deposited and Ru-Si solid state reaction grown ruthenium silicides on silicon
Authors: Jelenković, EV
To, S 
Blackford, MG
Kutsay, O
Jha, SK
Keywords: Raman spectroscopy
Ruthenium silicide (Ru2Si3)
Issue Date: 2015
Publisher: Pergamon Press
Source: Materials science in semiconductor processing, 2015, v. 40, p. 817-821 How to cite?
Journal: Materials science in semiconductor processing 
Abstract: Ru2Si3 silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides.
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2015.07.085
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

Last Week
Last month
Checked on Aug 13, 2017

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.