Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43579
Title: High-performance solution-processed low-voltage polymer thin-film transistors with low-k/High-k bilayer gate dielectric
Authors: Tang, W 
Li, J
Zhao, J
Zhang, W
Yan, F 
Guo, X
Keywords: Bilayer dielectric
Low voltage
Organic thin-film transistors (OTFTs)
Solution processed
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE electron device letters, 2015, v. 36, no. 9, 7173430, p. 950-952 How to cite?
Journal: IEEE electron device letters 
Abstract: Solution-processed low-voltage organic thin-film transistors (OTFTs) were fabricated using the high-mobility donor-acceptor copolymer semiconductor indacenodithiophene-co-benzothiadiazole (IDTBT) and large permittivity (high-k) relaxor ferroelectric polymer poly (vinylidene fluoride-trifluoroethylene-chlorofloroethylene). It is shown that, with the face-on molecule packing in as-deposited IDTBT films, the close interfacing between the backbone and the dielectric layer causes significant mobility degradation of the fabricated OTFTs due to dipole effects. By inserting a thin, low-polar dielectric layer between the high-k one and the channel, the dipole field can be effectively screened and the devices present a high mobility similar to that of previously reported high-voltage IDTBT OTFTs. With the bilayer gate dielectric and the IDTBT semiconductor, low-voltage OTFTs are achieved with the average mobility of 1.4 cm2/V·s and ON/OFF-current ratio larger than 106 , which is among the best reported performance so far for solution processed low-voltage OTFTs.
URI: http://hdl.handle.net/10397/43579
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2462833
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