Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43301
Title: Study of the hole transport processes in solution-processed layers of the wide bandgap semiconductor copper(I) thiocyanate (CuSCN)
Authors: Pattanasattayavong, P
Mottram, AD
Yan, F 
Anthopoulos, TD
Keywords: Copper thiocyanate
Hole transport
Solution processing
Wide bandgap p-type semiconductors
Issue Date: 2015
Publisher: Wiley-VCH
Source: Advanced functional materials, 2015, v. 25, no. 43, p. 6802-6813 How to cite?
Journal: Advanced functional materials 
Abstract: Wide bandgap hole-transporting semiconductor copper(I) thiocyanate (CuSCN) has recently shown promise both as a transparent p-type channel material for thin-film transistors and as a hole-transporting layer in organic light-emitting diodes and organic photovoltaics. Herein, the hole-transport properties of solution-processed CuSCN layers are investigated. Metal-insulator-semiconductor capacitors are employed to determine key material parameters including: dielectric constant [5.1 (±1.0)], flat-band voltage [-0.7 (±0.1) V], and unintentional hole doping concentration [7.2 (±1.4) × 1017 cm-3]. The density of localized hole states in the mobility gap is analyzed using electrical field-effect measurements; the distribution can be approximated invoking an exponential function with a characteristic energy of 42.4 (±0.1) meV. Further investigation using temperature-dependent mobility measurements in the range 78-318 K reveals the existence of three transport regimes. The first two regimes observed at high (303-228 K) and intermediate (228-123 K) temperatures are described with multiple trapping and release and variable range hopping processes, respectively. The third regime observed at low temperatures (123-78 K) exhibits weak temperature dependence and is attributed to a field-assisted hopping process. The transitions between the mechanisms are discussed based on the temperature dependence of the transport energy. The wide bandgap p-type semiconductor copper(I) thiocyanate (CuSCN) has the potential to replace conventional hole-transport materials in numerous opto/electronics applications. This work provides a comprehensive analysis of the charge transport properties of solution-processed CuSCN layers. Various techniques are employed to evaluate the dielectric constant, flat-band voltage, unintentional doping concentration, density of states in the mobility gap, and hole-transport mechanisms.
URI: http://hdl.handle.net/10397/43301
ISSN: 1616-301X
DOI: 10.1002/adfm.201502953
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