Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43060
Title: Growth ambient on memory characteristics in AU nanoclusters embedded in high-k dielectric as novel non-volatile memory
Authors: Chan, KC
Lee, PF
Dai, JY 
Keywords: Metal nanoclusters
AU
Floating gate memory
Flash memory
Issue Date: 2008
Publisher: Elsevier
Source: Microelectronic engineering, 2008, v. 85, no. 12, p. 2385-2387 How to cite?
Journal: Microelectronic engineering 
Abstract: In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013 cm−2 has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.
URI: http://hdl.handle.net/10397/43060
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/j.mee.2008.09.031
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