Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4222
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Li, KT | - |
dc.creator | Lo, VC | - |
dc.date.accessioned | 2014-12-11T08:24:27Z | - |
dc.date.available | 2014-12-11T08:24:27Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4222 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. T. Li & V. C. Lo, J. Appl. Phys. 97, 034107 (2005) and may be found at http://link.aip.org/link/?jap/97/034107. | en_US |
dc.subject | Lead compounds | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Potts model | en_US |
dc.subject | Dielectric polarisation | en_US |
dc.subject | Dielectric hysteresis | en_US |
dc.subject | Electron traps | en_US |
dc.subject | Hole traps | en_US |
dc.subject | Space charge | en_US |
dc.subject | Ferroelectric switching | en_US |
dc.subject | Vacancies (crystal) | en_US |
dc.title | Simulation of oxygen vacancy induced phenomena in ferroelectric thin films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 8 | - |
dc.identifier.volume | 97 | - |
dc.identifier.issue | 3 | - |
dc.identifier.doi | 10.1063/1.1846947 | - |
dcterms.abstract | The role of oxygen vacancy in lead–titanate–zirconate ferroelectric thin film has been numerically simulated using the two-dimensional four-state Potts model. On one hand, the presence of an oxygen vacancy in a perovskite cell strongly influences the displacement of the Ti⁴⁺ion. Hence the vacancy–dipole coupling must be considered in the switching mechanism. On the other hand, a space charge layer is established by the inhomogeneous distribution of oxygen vacancies through trapping charge carriers. Consequently, the thickness dependence of the coercive field and remanent polarization are reproduced in the presence of this oxygen vacancy distribution. Frequency, temperature, and driving voltage-dependent polarization fatigue behaviors are also simulated. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 1 Feb. 2005, v. 97, no. 3, 034107, p. 1-8 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2005-02-01 | - |
dc.identifier.isi | WOS:000226778300061 | - |
dc.identifier.scopus | 2-s2.0-13644279561 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r21077 | - |
dc.description.ros | 2004-2005 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Li_Simulation_oxygen_vacancy.pdf | 131.29 kB | Adobe PDF | View/Open |
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