Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4221
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dc.contributorDepartment of Applied Physics-
dc.creatorLo, VC-
dc.date.accessioned2014-12-11T08:28:07Z-
dc.date.available2014-12-11T08:28:07Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4221-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in V. C. Lo, J. Appl. Phys. 94, 3353 (2003) and may be found at http://link.aip.org/link/?jap/94/3353.en_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectDielectric hysteresisen_US
dc.subjectDielectric polarisationen_US
dc.titleSimulation of thickness effect in thin ferroelectric films using Landau-Khalatnikov theoryen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage3353-
dc.identifier.epage3359-
dc.identifier.volume94-
dc.identifier.issue5-
dc.identifier.doi10.1063/1.1598275-
dcterms.abstractThe thickness effect in ferroelectric thin films has been theoretically investigated using the Landau–Khalatnikov theory. Ferroelectric properties such as the hysteresis loop, and its associated coercive field and the remanent polarization of various film thicknesses have been numerically simulated. In this simulation, the thin film was modeled by the stacking of layers, each of which has unique parameters for the Landau free energy. Due to the interfacial effects near the electrodes, the parameters for the surface layers are different from those for the bulk. The simulated result shows that the coercive field decreases while the remanent polarization increases with thickness. Both of these trends qualitatively agree with experiments.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Sept. 2003, v. 94, no. 5, p. 3353-3359-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2003-09-01-
dc.identifier.isiWOS:000184844200084-
dc.identifier.scopus2-s2.0-0141633751-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr19459-
dc.description.ros2003-2004 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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