Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4217
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Chen, XY | - |
dc.creator | Wong, KH | - |
dc.creator | Mak, CL | - |
dc.creator | Yin, XB | - |
dc.creator | Wang, M | - |
dc.creator | Liu, JM | - |
dc.creator | Liu, Z | - |
dc.date.accessioned | 2014-12-11T08:24:29Z | - |
dc.date.available | 2014-12-11T08:24:29Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4217 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Y. Chen et al., J. Appl. Phys. 91, 5728 (2002) and may be found at http://link.aip.org/link/?jap/91/5728. | en_US |
dc.subject | Magnesium compounds | en_US |
dc.subject | Insulating thin films | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Crystal microstructure | en_US |
dc.subject | Etching | en_US |
dc.title | Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser deposition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: K. H. Wong | en_US |
dc.description.otherinformation | Author name used in this publication: C. L. Mak | en_US |
dc.description.otherinformation | Author name used in this publication: J. M. Liu | en_US |
dc.description.otherinformation | Author name used in this publication: Z. G. Liu | en_US |
dc.identifier.spage | 5728 | - |
dc.identifier.epage | 5734 | - |
dc.identifier.volume | 91 | - |
dc.identifier.issue | 9 | - |
dc.identifier.doi | 10.1063/1.1461059 | - |
dcterms.abstract | Selective growth of singly oriented (110)-, (100)-, and (111)-MgO films on Si(100)substrates were obtained by pulsed laser deposition. The effects of deposition temperature, ambient oxygen pressure, and etching of the substrate on the structural properties of the films were studied. It is found that the crystalline orientations of the MgO films are determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition and etching of the Si substrates only effect the crystalline quality. Both (110)- and (111)-oriented films show granular grain structures. The (100)-oriented films grown on etched Si substrates display similar granular structures. Those deposited on nonetched Si substrates, however, reveal distinctive columnar grains. The observed phenomena are discussed based on the theory of crystal growth. The mechanism of the orientation selection is attributed to the energy balance between the surface and the interface energies. The varied grain structures are explained by considering the mobility of adatoms in different situations. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 1 May 2002, v. 91, no. 9, p. 5728-5734 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2002-05-01 | - |
dc.identifier.isi | WOS:000175069000031 | - |
dc.identifier.scopus | 2-s2.0-0036573295 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r10767 | - |
dc.description.ros | 2001-2002 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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Chen_Selective_growth_oriented.pdf | 402.39 kB | Adobe PDF | View/Open |
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