Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4185
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorWong, CK-
dc.creatorTsang, CH-
dc.creatorShin, FG-
dc.date.accessioned2014-12-11T08:24:22Z-
dc.date.available2014-12-11T08:24:22Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4185-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong, C. H. Tsang & F. G. Shin, J. Appl. Phys. 98, 074101 (2005) and may be found at http://link.aip.org/link/?jap/98/074101.en_US
dc.subjectBarium compoundsen_US
dc.subjectLead compoundsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectPermittivityen_US
dc.subjectDielectric hysteresisen_US
dc.titleModeling of bias-field-dependent dielectric properties in ferroelectric thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. K. Wongen_US
dc.description.otherinformationAuthor name used in this publication: C. H. Tsangen_US
dc.description.otherinformationAuthor name used in this publication: F. G. Shinen_US
dc.identifier.spage1-
dc.identifier.epage9-
dc.identifier.volume98-
dc.identifier.issue7-
dc.identifier.doi10.1063/1.2060950-
dcterms.abstractThe bias-field-dependent dielectricity of ferroelectric thin films is studied by use of a multilayer model capable of modeling saturated and unsaturated hysteresis behavior under arbitrary fields. The simulated minor hysteresis loops at different bias fields are used to calculate the variation of dielectric permittivity with the bias field. The ε-E loops show asymmetric shifting along the field axis when the film is assumed to possess a secondary dielectric layer with trapped charge. Simulated D-E and ε-E loops are compared with the experimental data on barium zirconate titanate and lead zirconate titanate thin films. In general, the model predictions show reasonably good agreement with experiment. Effects of charge density and the ac measurement field amplitude on the measured permittivity, as well as the dielectric tunability have also been examined.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Oct. 2005, v. 98, no. 7, 074101, p. 1-9-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2005-10-01-
dc.identifier.isiWOS:000232558200056-
dc.identifier.scopus2-s2.0-27144550754-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr25892-
dc.description.ros2005-2006 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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