Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/416
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorLu, SG-
dc.creatorZhu, XH-
dc.creatorMak, CL-
dc.creatorWong, KH-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:27:34Z-
dc.date.available2014-12-11T08:27:34Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/416-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.G. Lu et al. Appl. Phys. Lett. 82, 2877 (2003) and may be found at http://link.aip.org/link/?apl/82/2877en_US
dc.subjectBarium compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectEpitaxial layersen_US
dc.subjectRelaxor ferroelectricsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectPermittivityen_US
dc.subjectPulsed laser depositionen_US
dc.titleHigh tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed-laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage2877-
dc.identifier.epage2879-
dc.identifier.volume82-
dc.identifier.issue17-
dcterms.abstractCompositionally graded barium strontium titanate [(Ba[sub x]Sr[sub 1-x])TiO₃—BST, x=0.75, 0.8, 0.9, and 1.0] thin films are fabricated by pulsed-laser deposition on a LaAlO₃ substrate with (La[sub 0.7]Sr[sub 0.3])MnO₃ as the bottom electrode. A high dielectric permittivity and temperature characteristic without Curie-Weiss law are obtained. A tunability of over 70% is obtained at frequency of 1 MHz, which is higher than that of single BST layer with the same compositions. All the results indicate that the graded thin films have better electrical properties than a single-layer film.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 28 Apr. 2003, v. 82, no. 17, p.2877-2879-
dcterms.isPartOfApplied physics letters-
dcterms.issued2003-04-28-
dc.identifier.isiWOS:000182399700044-
dc.identifier.scopus2-s2.0-0038297129-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr11990-
dc.description.ros2002-2003 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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