Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/40812
Title: High quality SnS van der Waals epitaxies on graphene buffer layer
Authors: Wang, W
Leung, KK
Fong, WK
Wang, SF
Hui, YY
Lau, SPP
Surya, C 
Keywords: Graphene
Interfaces
Molecular beam epitaxy
Thin films
Absorption
Gallium arsenide
Issue Date: 2012
Publisher: SPIE-International Society for Optical Engineering
Source: Proceedings of SPIE : the International Society for Optical Engineering, 2012, v. 8470, 84700E How to cite?
Journal: Proceedings of SPIE : the International Society for Optical Engineering 
Abstract: We report investigation of SnS van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Experimental results demonstrate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 eV. Substantial improvement in the crystallinity for the SnS thin films is accomplished by using graphene as the buffer layer. Using this novel growth technique we observed significant lowering in the rocking curve FWHM of the SnS films. Crystallite size in the range of 2-3 μm is observed which represents a significant improvement over the existing results. The absorption coefficient, α, is found to be of the order of 104 cm-1 which demonstrates sharp cutoff as a function of energy for films grown using graphene buffer layers indicating low concentration of localized states in the bandgap. Hole mobility as high as 81 cm2V-1s-1 is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the SnS/graphene interface. As a result, the interaction between the SnS thin films and the graphene buffer layer is dominated by a weak vdW force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.
Description: Conference on Thin Film Solar Technology IV, San Diego, U.S.A., August 2012
URI: http://hdl.handle.net/10397/40812
ISSN: 0277-786X
EISSN: 1996-756X
DOI: 10.1117/12.930946
Appears in Collections:Conference Paper

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