Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/40773
Title: Growth and characterization of Cu2ZnSnS4 nanostructures using anodized aluminum as the growth mask
Authors: Chan, CP
Chen, Z
Lam, H
Surya, C 
Keywords: Nanostructures
Aluminum
Diffraction
Electrons
Absorption
Oxides
Rods
Sulfur
Thin films
X-ray diffraction
Issue Date: 2009
Publisher: SPIE-International Society for Optical Engineering
Source: Proceedings of SPIE : the International Society for Optical Engineering, 2009, v. 7411, 741108 How to cite?
Journal: Proceedings of SPIE : the International Society for Optical Engineering 
Abstract: In this paper we report the growth and characterization of Cu2ZnSnS4 (CZTS) nanostructures by co-electrodeposition technique using CuCl2, SnCl2 and ZnCl2 as sources and choline-based ionic liquid (IL) as the electrolyte. X-ray diffraction analysis of CZTS thin films grown by this technique indicated that the films have a kesterite structure with preferred grain orientation along (112). It is found that the energy bandgap of the material is about 1.49eV and the optical absorption coefficient is in the order of 104cm-1. Anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanostructures. Anodization of the aluminum foil was carried out in phosphoric acid solution at 1°C and a potential of 40 to 100V was applied. Sulfurization of the rods was performed in elemental sulfur vapor at 450°C for four hours using N2 as the ambient gas. Experimental results show that nanotubes were formed using the technique and the diameter can be well controlled by varying the applied potential in the anodization process. Electron diffraction experiments show that a mixture of single- and poly-crystalline nanostructures was found.
Description: Conference on Nanoscale Photonic and Cell Technologies for Photovoltaics II, San Diego, U.S.A., August 2009
URI: http://hdl.handle.net/10397/40773
ISSN: 0277-786X
EISSN: 1996-756X
DOI: 10.1117/12.828172
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