Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4039
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dc.contributorDepartment of Applied Physics-
dc.creatorHao, JH-
dc.creatorLuo, Z-
dc.creatorGao, J-
dc.date.accessioned2014-12-11T08:23:32Z-
dc.date.available2014-12-11T08:23:32Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4039-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. H. Hao, Z. Luo & J. Gao, J. Appl. Phys. 100, 114017 (2006) and may be found at http://link.aip.org/link/?jap/100/114107.en_US
dc.subjectStrontium compoundsen_US
dc.subjectDielectric thin filmsen_US
dc.subjectEpitaxial layersen_US
dc.subjectInternal stressesen_US
dc.subjectPermittivityen_US
dc.subjectDielectric lossesen_US
dc.titleEffects of substrate on the dielectric and tunable properties of epitaxial SrTiO₃thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage5-
dc.identifier.volume100-
dc.identifier.issue11-
dc.identifier.doi10.1063/1.2392746-
dcterms.abstractTunable dielectric thin films of SrTiO₃(STO) were prepared on different single-crystalline substrates, including insulating LaAlO₃, conductive Nb-doped STO (NSTO), and superconducting YBa₂Cu₃O₇₋δ. Substrate effects including morphology, orientation, and lattice mismatch induced strains were investigated. We found that a change of substrate used for STO thin films can strongly affect the dielectric properties of STO thin films in terms of dielectric constant, loss tangent, and tunability. Effects of substrate properties on the temperature dependence of dielectric constant and loss tangent were investigated. At low temperatures, STO thin films under minimal strain yield high dielectric constant and low loss tangent while the thin films under either tensile or compressive strain exhibit the reduced dielectric constant and high loss. The tunability of about 77% in STO/NSTO system, close to the value found in STO single crystal, was observed at 10 K. Physical origin of observed phenomena was discussed.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Dec. 2006, v. 100, no. 11, 114107, p. 1-5-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2006-12-01-
dc.identifier.isiWOS:000242887400120-
dc.identifier.scopus2-s2.0-33845767967-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr34040-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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