Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4038
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dc.contributorDepartment of Applied Physics-
dc.creatorYao, Y-
dc.creatorLu, SG-
dc.creatorChen, H-
dc.creatorWong, KH-
dc.date.accessioned2014-12-11T08:23:32Z-
dc.date.available2014-12-11T08:23:32Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4038-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Yao et al., J. Appl. Phys. 96, 5830 (2004) and may be found at http://link.aip.org/link/?jap/96/5830.en_US
dc.subjectLead compoundsen_US
dc.subjectLanthanum compoundsen_US
dc.subjectAntiferromagnetic materialsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectDielectric hysteresisen_US
dc.subjectDielectric polarisationen_US
dc.subjectLeakage currentsen_US
dc.subjectDielectric lossesen_US
dc.subjectPermittivityen_US
dc.subjectSurface morphologyen_US
dc.subjectAnnealingen_US
dc.subjectCrystallisationen_US
dc.titleEffects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage5830-
dc.identifier.epage5835-
dc.identifier.volume96-
dc.identifier.issue10-
dc.identifier.doi10.1063/1.1804226-
dcterms.abstractLanthanum-doped lead zirconate stannate titanate antiferroelectric thin films were deposited onto Pt-buffered silicon substrates using the pulsed laser deposition method. The deposition temperature was 570 °C. The postdeposition annealing process was carried out in an oxygen-flow tube furnace at temperatures ranging from 650 to 800 °C for a duration of 30 min; its effects were studied through the variations of the microstructure as well as the electrical and dielectric properties. It was found that an appropriate annealing process at temperatures above 700 °C could substantially improve the dielectric properties. However, annealing beyond 800 °C caused the film properties to deteriorate severely. Explanations were given with regard to the microstructure-property relationship.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 Nov. 2004, v. 96, no. 10, p. 5830-5835-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2004-11-15-
dc.identifier.isiWOS:000224926000071-
dc.identifier.scopus2-s2.0-9944219645-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr21525-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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