Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/400
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dc.contributorDepartment of Applied Physics-
dc.creatorYan, F-
dc.creatorHong, Y-
dc.creatorChan, HLW-
dc.date.accessioned2014-12-11T08:27:34Z-
dc.date.available2014-12-11T08:27:34Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/400-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Yan, Y. Hong, & H.L.W. Chan. Appl. Phys. Lett. 92, 243301 (2008) and may be found at http://link.aip.org/link/?apl/92/243301en_US
dc.subjectMIS devicesen_US
dc.subjectPolymer filmsen_US
dc.subjectSpace chargeen_US
dc.titleMeasurement of ultralow injection current to polymethyl-methacrylate filmen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume92-
dcterms.abstractUltralow electron/hole injection currents from an electrode to a polymethyl-methacrylate (PMMA) film can be accurately decided by measuring the slow shift in the flatband voltage of a metal-insulator-semiconductor (MIS) device. It has been found that both the electron and hole injection currents are limited by the metal/PMMA interface and can be roughly described with a modified Richardson-Schottky equation. The space charge or dipole relaxation in PMMA films has been observed as well, which induces an instant change in flatband voltage of the MIS devices. These properties are critical issues for the stability of organic thin film transistors with PMMA gate insulator.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 16 June 2008, v. 92, 243301, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2008-06-16-
dc.identifier.isiWOS:000256934900101-
dc.identifier.scopus2-s2.0-45749117193-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr36799-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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